Installation type | Surface mount |
packing | TR |
series | U-MOSVI |
Part status | Final sale |
working temperature | 150°C(TJ) |
Encapsulation/Housing | VS-6(2.9x2.8) |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 4.5A(Ta) |
On resistance (maximum) for different Ids and Vgs | 56 mΩ @ 2.2A,10V |
Vgs (th) (maximum) for different Ids | 2V @ 100µA |
Gate charge (Qg) at different Vgs (maximum) | 14 nC @ 10 V |
Input capacitance at different Vds (Ciss) (maximum) | 510 pF @ 10 V |
Power dissipation (maximum) | 700mW(Ta) |