| Installation type | Surface mount |
| packing | TR |
| series | U-MOSIV |
| Part status | Final sale |
| working temperature | 175°C(TJ) |
| Encapsulation/Housing | DPAK+ |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 40 V |
| Current at 25 ° C - continuous drain (Id) | 10A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 6V,10V |
| On resistance (maximum) for different Ids and Vgs | 28 mΩ @ 5A,10V |
| Vgs (th) (maximum) for different Ids | 3V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 10 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 410 pF @ 10 V |
| Power dissipation (maximum) | 25W(Tc) |