| Installation type | Surface mount | 
| packing | TR,CT | 
| series | DTMOSIV | 
| Part status | On sale | 
| working temperature | 150°C(TJ) | 
| Encapsulation/Housing | 4-DFN-EP(8x8) | 
| Country of origin | Japan | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 600 V | 
| Current at 25 ° C - continuous drain (Id) | 15.8A(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V | 
| On resistance (maximum) for different Ids and Vgs | 190 mΩ @ 7.9A,10V | 
| Vgs (th) (maximum) for different Ids | 3.7V @ 790µA | 
| Gate charge (Qg) at different Vgs (maximum) | 38 nC @ 10 V | 
| Vgs (max) | ±30V | 
| Input capacitance at different Vds (Ciss) (maximum) | 1350 pF @ 300 V | 
| FET function | Grade knot | 
| Power dissipation (maximum) | 139W(Tc) |