TK10J80E,S1E
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TK10J80E,S1E
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TK10J80E,S1E

Brand:Toshiba
Model:TK10J80E,S1E
stock:18953
Store:ShenZhen/Hongkong
Price:1+
$0.50
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product details
Common problem
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Installation type Through-Hole
packing pipe
series π-MOSVIII
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing TO-3P(N)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 800 V
Current at 25 ° C - continuous drain (Id) 10A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 1 Ω @ 5A,10V
Vgs (th) (maximum) for different Ids 4V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 46 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 2000 pF @ 25 V
Power dissipation (maximum) 250W(Tc)
Common problem
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