| Installation type | Surface mount |
| packing | TR,CT |
| series | U-MOSV-H |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | 8-TSON Advance(3.3x3.3) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 22A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 8.3 mΩ @ 11A,10V |
| Vgs (th) (maximum) for different Ids | 2.5V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 27 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2500 pF @ 10 V |
| Power dissipation (maximum) | 700mW(Ta),30W(Tc) |