| Installation type | Surface mount | 
| packing | TR | 
| series | U-MOSVII-H | 
| Part status | stop production | 
| working temperature | 150°C(TJ) | 
| Encapsulation/Housing | 8-TSON Advance(3.1x3.1) | 
| Country of origin | Japan | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 30 V | 
| Current at 25 ° C - continuous drain (Id) | 13A(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V | 
| On resistance (maximum) for different Ids and Vgs | 11.4 mΩ @ 6.5A,10V | 
| Vgs (th) (maximum) for different Ids | 2.3V @ 200µA | 
| Gate charge (Qg) at different Vgs (maximum) | 20 nC @ 10 V | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 1350 pF @ 10 V | 
| Power dissipation (maximum) | 700mW(Ta),18W(Tc) |