TPCC8065-H,LQ(S
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TPCC8065-H,LQ(S
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TPCC8065-H,LQ(S

Brand:Toshiba
Model:TPCC8065-H,LQ(S
stock:15156
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series U-MOSVII-H
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing 8-TSON Advance(3.1x3.1)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 13A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 11.4 mΩ @ 6.5A,10V
Vgs (th) (maximum) for different Ids 2.3V @ 200µA
Gate charge (Qg) at different Vgs (maximum) 20 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1350 pF @ 10 V
Power dissipation (maximum) 700mW(Ta),18W(Tc)
Common problem
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