Installation type | Surface mount |
packing | TR,CT |
series | π-MOSVI |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | TSM |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 3.2A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 2.5V,4V |
On resistance (maximum) for different Ids and Vgs | 120mΩ @ 1.6A,4V |
Vgs (max) | ±10V |
Input capacitance at different Vds (Ciss) (maximum) | 152 pF @ 10 V |
Power dissipation (maximum) | 1.25W(Ta) |