IMW65R057M1HXKSA1
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IMW65R057M1HXKSA1
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IMW65R057M1HXKSA1

Brand:Infineon
Model:IMW65R057M1HXKSA1
stock:47203
Store:ShenZhen/Hongkong
Price:1+
$2.88
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product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
series CoolSiC™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO247-3-41
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology SiCFET(silicon carbide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 35A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 18V
On resistance (maximum) for different Ids and Vgs 74 mΩ @ 16.7A,18V
Vgs (th) (maximum) for different Ids 5.7V @ 5mA
Gate charge (Qg) at different Vgs (maximum) 28 nC @ 18 V
Vgs (max) +20V,-2V
Input capacitance at different Vds (Ciss) (maximum) 930 pF @ 400 V
Power dissipation (maximum) 133W(Tc)
Common problem
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