| Installation type | Surface mount | 
| packing | TR,CT | 
| series | CoolSiC™ | 
| Part status | On sale | 
| working temperature | -55°C ~ 175°C(TJ) | 
| Encapsulation/Housing | PG-TO263-7-12 | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | SiCFET(silicon carbide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 1200 V | 
| Current at 25 ° C - continuous drain (Id) | 13A(Tc) | 
| On resistance (maximum) for different Ids and Vgs | 294 mΩ @ 4A,18V | 
| Vgs (th) (maximum) for different Ids | 5.7V @ 1.6mA | 
| Gate charge (Qg) at different Vgs (maximum) | 9.4 nC @ 18 V | 
| Vgs (max) | +18V,-15V | 
| Input capacitance at different Vds (Ciss) (maximum) | 312 pF @ 800 V | 
| FET function | standard | 
| Power dissipation (maximum) | 83W(Tc) |