IPI029N06NAKSA1
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IPI029N06NAKSA1
Brand：Infineon
Model：IPI029N06NAKSA1
stock：47709
Store：ShenZhen/Hongkong
Price：1+
$0.49
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Through-Hole |
| packing | pipe |
| series | OptiMOS™ |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO262-3 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 60 V |
| Current at 25 ° C - continuous drain (Id) | 24A(Ta),100A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 6V,10V |
| On resistance (maximum) for different Ids and Vgs | 2.9 mΩ @ 100A,10V |
| Vgs (th) (maximum) for different Ids | 2.8V @ 75µA |
| Gate charge (Qg) at different Vgs (maximum) | 56 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 4100 pF @ 30 V |
| Power dissipation (maximum) | 3W(Ta),136W(Tc) |
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