IPD25N06S4L30ATMA2
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IPD25N06S4L30ATMA2
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IPD25N06S4L30ATMA2

Brand:Infineon
Model:IPD25N06S4L30ATMA2
stock:28422
Store:ShenZhen/Hongkong
Price:1+
$0.05
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT,bulk
series Automotive, AEC-Q101, OptiMOS™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO252-3-11
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 25A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 30 mΩ @ 25A,10V
Vgs (th) (maximum) for different Ids 2.2V @ 8µA
Gate charge (Qg) at different Vgs (maximum) 16.3 nC @ 10 V
Vgs (max) ±16V
Input capacitance at different Vds (Ciss) (maximum) 1220 pF @ 25 V
Power dissipation (maximum) 29W(Tc)
Common problem
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