| Installation type | Surface mount | 
| packing | TR,CT | 
| series | HEXFET® | 
| Part status | On sale | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | 8-SO | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | P channels | 
| Drain source voltage (Vdss) | 30 V | 
| Current at 25 ° C - continuous drain (Id) | 12A(Ta) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V,20V | 
| On resistance (maximum) for different Ids and Vgs | 8.5 mΩ @ 12A,20V | 
| Vgs (th) (maximum) for different Ids | 2.4V @ 25µA | 
| Gate charge (Qg) at different Vgs (maximum) | 52 nC @ 10 V | 
| Vgs (max) | ±25V | 
| Input capacitance at different Vds (Ciss) (maximum) | 1680 pF @ 25 V | 
| Power dissipation (maximum) | 2.5W(Ta) |