IPB180N04S4H0ATMA1
Home
Category
MOSFET
IPB180N04S4H0ATMA1
The pictures are for reference only

IPB180N04S4H0ATMA1

Brand:Infineon
Model:IPB180N04S4H0ATMA1
stock:13477
Store:ShenZhen/Hongkong
Price:1+
$0.62
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series OptiMOS™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO263-7-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 180A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 1.1 mΩ @ 100A,10V
Vgs (th) (maximum) for different Ids 4V @ 180µA
Gate charge (Qg) at different Vgs (maximum) 225 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 17940 pF @ 25 V
Power dissipation (maximum) 250W(Tc)
Common problem
RFQ
WhatsApp
Click the button below to copy the Skype
Click the button below to copy the Wechat
Click the button below to copy the Whatsapp
Click the button below to copy the Line
RFQ
We will reply to you through your email address as soon as we receive your RFQ
Cookies Notification