| Installation type | Through-Hole | 
| packing | bulk,pipe | 
| series | CoolMOS™ | 
| Part status | Not applicable to new design | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | PG-TO220-FP | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 600 V | 
| Current at 25 ° C - continuous drain (Id) | 23.8A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V | 
| On resistance (maximum) for different Ids and Vgs | 160 mΩ @ 11.3A,10V | 
| Vgs (th) (maximum) for different Ids | 3.5V @ 750µA | 
| Gate charge (Qg) at different Vgs (maximum) | 75 nC @ 10 V | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 1660 pF @ 100 V | 
| Power dissipation (maximum) | 34W(Tc) |