IMZ120R045M1XKSA1
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IMZ120R045M1XKSA1
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IMZ120R045M1XKSA1

Brand:Infineon
Model:IMZ120R045M1XKSA1
stock:19627
Store:ShenZhen/Hongkong
Price:1+
$3.62
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product details
Common problem
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Installation type Through-Hole
packing pallet
series CoolSiC™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO247-4-1
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology SiCFET(silicon carbide)
FET Type N channels
Drain source voltage (Vdss) 1200 V
Current at 25 ° C - continuous drain (Id) 52A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 15V
On resistance (maximum) for different Ids and Vgs 59 mΩ @ 20A,15V
Vgs (th) (maximum) for different Ids 5.7V @ 10mA
Gate charge (Qg) at different Vgs (maximum) 52 nC @ 15 V
Vgs (max) +20V,-10V
Input capacitance at different Vds (Ciss) (maximum) 1900 pF @ 800 V
FET function current testing
Power dissipation (maximum) 228W(Tc)
Common problem
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