Installation type | Through-Hole |
packing | pallet |
series | CoolSiC™ |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | PG-TO247-4-1 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiCFET(silicon carbide) |
FET Type | N channels |
Drain source voltage (Vdss) | 1200 V |
Current at 25 ° C - continuous drain (Id) | 52A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 15V |
On resistance (maximum) for different Ids and Vgs | 59 mΩ @ 20A,15V |
Vgs (th) (maximum) for different Ids | 5.7V @ 10mA |
Gate charge (Qg) at different Vgs (maximum) | 52 nC @ 15 V |
Vgs (max) | +20V,-10V |
Input capacitance at different Vds (Ciss) (maximum) | 1900 pF @ 800 V |
FET function | current testing |
Power dissipation (maximum) | 228W(Tc) |