| Installation type | Through-Hole |
| packing | pipe |
| Part status | Final sale |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | PG-TO251-3 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 700 V |
| Current at 25 ° C - continuous drain (Id) | 5.4A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 1.4 Ω @ 1A,10V |
| Vgs (th) (maximum) for different Ids | 3.5V @ 100µA |
| Gate charge (Qg) at different Vgs (maximum) | 10.5 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 225 pF @ 100 V |
| Power dissipation (maximum) | 53W(Tc) |