IQE006NE2LM5CGATMA1
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IQE006NE2LM5CGATMA1
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IQE006NE2LM5CGATMA1

Brand:Infineon
Model:IQE006NE2LM5CGATMA1
stock:100
Store:ShenZhen/Hongkong
Price:1+
$0.55
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product details
Common problem
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Installation type Through-Hole
packing TR,CT
series OptiMOS™ 5
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing IPAK(TO-251AA)
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 25 V
Current at 25 ° C - continuous drain (Id) 41A(Ta),298A(Tc)
On resistance (maximum) for different Ids and Vgs 650mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 82.1 nC @ 10 V
Vgs (max) ±16V
Input capacitance at different Vds (Ciss) (maximum) 5453 pF @ 12 V
Power dissipation (maximum) 2.1W(Ta),89W(Tc)
Common problem
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