| Installation type | Surface mount |
| packing | TR,CT |
| series | CoolSiC™ |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO263-7-12 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1200 V |
| Current at 25 ° C - continuous drain (Id) | 56A(Tc) |
| On resistance (maximum) for different Ids and Vgs | 41 mΩ @ 25A,18V |
| Vgs (th) (maximum) for different Ids | 5.7V @ 11.5mA |
| Gate charge (Qg) at different Vgs (maximum) | 63 nC @ 18 V |
| Vgs (max) | +18V,-15V |
| Input capacitance at different Vds (Ciss) (maximum) | 2290 pF @ 800 V |
| FET function | standard |
| Power dissipation (maximum) | 300W(Tc) |