IPD50N04S309ATMA1
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IPD50N04S309ATMA1
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IPD50N04S309ATMA1

Brand:Infineon
Model:IPD50N04S309ATMA1
stock:29227
Store:ShenZhen/Hongkong
Price:1+
$0.07
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product details
Common problem
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Installation type Surface mount
packing TR,bulk
series OptiMOS™
Part status Not applicable to new design
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO252-3-11
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 50A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 9 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 4V @ 28µA
Gate charge (Qg) at different Vgs (maximum) 26 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1750 pF @ 25 V
Power dissipation (maximum) 63W(Tc)
Common problem
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