IPB45P03P4L11ATMA2
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IPB45P03P4L11ATMA2
Brand：Infineon
Model：IPB45P03P4L11ATMA2
stock：54830
Store：ShenZhen/Hongkong
Price：1+
$0.20
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Surface mount |
| packing | TR |
| series | Automotive, AEC-Q101, OptiMOS™ |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO263-3-2 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 45A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 10.8 mΩ @ 45A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 85µA |
| Gate charge (Qg) at different Vgs (maximum) | 55 nC @ 10 V |
| Vgs (max) | +5V,-16V |
| Input capacitance at different Vds (Ciss) (maximum) | 3770 pF @ 25 V |
| Power dissipation (maximum) | 58W(Tc) |
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