| Installation type | Surface mount |
| packing | TR |
| series | SIPMOS® |
| Part status | Not applicable to new design |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO263-3-2 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 70A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 16 mΩ @ 50A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 2mA |
| Gate charge (Qg) at different Vgs (maximum) | 240 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 4540 pF @ 25 V |
| Power dissipation (maximum) | 250W(Tc) |