IPTG025N10NM5ATMA1
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IPTG025N10NM5ATMA1
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IPTG025N10NM5ATMA1

Brand:Infineon
Model:IPTG025N10NM5ATMA1
stock:54821
Store:ShenZhen/Hongkong
Price:1+
$0.61
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product details
Common problem
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Installation type Surface mount
packing TR
series OptiMOS™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-HSOG-8-1
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 27A(Ta),206A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 6V,10V
On resistance (maximum) for different Ids and Vgs 2.5 mΩ @ 150A 10V
Vgs (th) (maximum) for different Ids 3.8V @ 158µA
Gate charge (Qg) at different Vgs (maximum) 120 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 8800 pF @ 50 V
Power dissipation (maximum) 3.8W(Ta),214W(Tc)
Common problem
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