| Installation type | Surface mount |
| packing | pipe |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | D2PAK |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 110A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,7V |
| On resistance (maximum) for different Ids and Vgs | 7 mΩ @ 64A,7V |
| Vgs (th) (maximum) for different Ids | 700mV @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 110 nC @ 4.5 V |
| Vgs (max) | ±10V |
| Input capacitance at different Vds (Ciss) (maximum) | 4700 pF @ 15 V |
| Power dissipation (maximum) | 140W(Tc) |