| Installation type | Surface mount |
| packing | CT |
| Part status | stop production |
| Encapsulation/Housing | Micro6™(TSOP-6) |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 4.4A(Ta) |
| On resistance (maximum) for different Ids and Vgs | 65 mΩ @ 4.4A,4.5V |
| Vgs (th) (maximum) for different Ids | 1.5V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 15 nC @ 4.5 V |
| Input capacitance at different Vds (Ciss) (maximum) | 1079 pF @ 10 V |