IRF3315STRR
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IRF3315STRR
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IRF3315STRR

Brand:Infineon
Model:IRF3315STRR
stock:65866
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series HEXFET®
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D2PAK
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 150 V
Current at 25 ° C - continuous drain (Id) 21A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 82 mΩ @ 12A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 95 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1300 pF @ 25 V
Power dissipation (maximum) 3.8W(Ta),94W(Tc)
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