IRL5602STRR
Home
Category
MOSFET
IRL5602STRR
The pictures are for reference only

IRL5602STRR

Brand:Infineon
Model:IRL5602STRR
stock:71403
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series HEXFET®
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D2PAK
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 24A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 42 mΩ @ 12A,4.5V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 44 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 1460 pF @ 15 V
Power dissipation (maximum) 75W(Tc)
Common problem
RFQ
WhatsApp
Click the button below to copy the Skype
Click the button below to copy the Wechat
Click the button below to copy the Whatsapp
Click the button below to copy the Line
RFQ
We will reply to you through your email address as soon as we receive your RFQ
Cookies Notification