IRF6636
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IRF6636
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IRF6636

Brand:Infineon
Model:IRF6636
stock:73878
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series HEXFET®
Part status stop production
working temperature -40°C ~ 150°C(TJ)
Encapsulation/Housing DIRECTFET™ ST
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 18A(Ta),81A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 4.5 mΩ @ 18A,10V
Vgs (th) (maximum) for different Ids 2.45V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 27 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2420 pF @ 10 V
Power dissipation (maximum) 2.2W(Ta),42W(Tc)
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