| Installation type | Surface mount | 
| packing | TR | 
| series | HEXFET® | 
| Part status | On sale | 
| Encapsulation/Housing | D2PAK | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 100 V | 
| Current at 25 ° C - continuous drain (Id) | 36A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V | 
| On resistance (maximum) for different Ids and Vgs | 44 mΩ @ 18A,10V | 
| Vgs (th) (maximum) for different Ids | 2V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 74 nC @ 5 V | 
| Vgs (max) | ±16V | 
| Input capacitance at different Vds (Ciss) (maximum) | 1800 pF @ 25 V | 
| Power dissipation (maximum) | 3.8W(Ta),140W(Tc) |