| Installation type | Through-Hole |
| packing | bulk,pipe |
| series | HEXFET® |
| Part status | stop production |
| Encapsulation/Housing | I-PAK |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 55 V |
| Current at 25 ° C - continuous drain (Id) | 42A(Tc) |
| On resistance (maximum) for different Ids and Vgs | 27 mΩ @ 25A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 48 nC @ 5 V |
| Input capacitance at different Vds (Ciss) (maximum) | 1700 pF @ 25 V |