| Installation type | Through-Hole |
| packing | pipe |
| series | OptiMOS™ |
| Part status | stop production |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO262-3 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 55 V |
| Current at 25 ° C - continuous drain (Id) | 80A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 6.8 mΩ @ 51A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 80µA |
| Gate charge (Qg) at different Vgs (maximum) | 170 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 7768 pF @ 25 V |
| Power dissipation (maximum) | 135W(Tc) |