| Installation type | Surface mount | 
| packing | TR | 
| series | SIPMOS® | 
| Part status | stop production | 
| Encapsulation/Housing | PG-TO252-3 | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | P channels | 
| Drain source voltage (Vdss) | 60 V | 
| Current at 25 ° C - continuous drain (Id) | 8.83A(Ta) | 
| On resistance (maximum) for different Ids and Vgs | 300 mΩ @ 6.2A,10V | 
| Vgs (th) (maximum) for different Ids | 4V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 13 nC @ 10 V | 
| Input capacitance at different Vds (Ciss) (maximum) | 420 pF @ 25 V | 
| Power dissipation (maximum) | 42W(Tc) |