SPB04N60S5ATMA1
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SPB04N60S5ATMA1
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SPB04N60S5ATMA1

Brand:Infineon
Model:SPB04N60S5ATMA1
stock:76732
Store:ShenZhen/Hongkong
Price:1+
$0.11
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product details
Common problem
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Installation type Surface mount
packing TR,CT,bulk
series CoolMOS™
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-TO263-3-2
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 4.5A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 950 mΩ @ 2.8A,10V
Vgs (th) (maximum) for different Ids 5.5V @ 200µA
Gate charge (Qg) at different Vgs (maximum) 22.9 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 580 pF @ 25 V
Power dissipation (maximum) 50W(Tc)
Common problem
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