Installation type | Surface mount |
packing | CT |
Part status | stop production |
Encapsulation/Housing | 8-SO |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 10A(Ta) |
On resistance (maximum) for different Ids and Vgs | 20 mΩ @ 5.6A,10V |
Vgs (th) (maximum) for different Ids | 1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 92 nC @ 10 V |
Input capacitance at different Vds (Ciss) (maximum) | 1700 pF @ 25 V |