IRL2203NSTRLPBF
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IRL2203NSTRLPBF
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IRL2203NSTRLPBF

Brand:Infineon
Model:IRL2203NSTRLPBF
stock:60240
Store:ShenZhen/Hongkong
Price:1+
$0.13
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT,bulk
series HEXFET®
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D2PAK
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 116A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 7 mΩ @ 60A,10V
Vgs (th) (maximum) for different Ids 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 60 nC @ 4.5 V
Vgs (max) ±16V
Input capacitance at different Vds (Ciss) (maximum) 3290 pF @ 25 V
Power dissipation (maximum) 3.8W(Ta),180W(Tc)
Common problem
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