| Installation type | Through-Hole | 
| packing | pipe | 
| series | CoolMOS™ | 
| Part status | stop production | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | PG-TO251-3-11 | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 650 V | 
| Current at 25 ° C - continuous drain (Id) | 4.5A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V | 
| On resistance (maximum) for different Ids and Vgs | 950 mΩ @ 2.8A,10V | 
| Vgs (th) (maximum) for different Ids | 3.9V @ 200µA | 
| Gate charge (Qg) at different Vgs (maximum) | 25 nC @ 10 V | 
| Vgs (max) | ±20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 490 pF @ 25 V | 
| Power dissipation (maximum) | 50W(Tc) |