| Installation type | Surface mount |
| packing | pipe |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | DIRECTFET™ SJ |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 5.7A(Ta),25A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 35 mΩ @ 5.7A,10V |
| Vgs (th) (maximum) for different Ids | 4.9V @ 50µA |
| Gate charge (Qg) at different Vgs (maximum) | 20 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 890 pF @ 25 V |
| Power dissipation (maximum) | 3W(Ta),42W(Tc) |