| Installation type | Surface mount | 
| packing | CT | 
| Part status | stop production | 
| Encapsulation/Housing | 6-PQFN(2x2) | 
| Country of origin | Germany | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 30 V | 
| Current at 25 ° C - continuous drain (Id) | 8.7A(Ta),19A(Tc) | 
| On resistance (maximum) for different Ids and Vgs | 15.5 mΩ @ 8.5A,4.5V | 
| Vgs (th) (maximum) for different Ids | 1.1V @ 10µA | 
| Gate charge (Qg) at different Vgs (maximum) | 11 nC @ 4.5 V | 
| Input capacitance at different Vds (Ciss) (maximum) | 1019 pF @ 25 V |