| Installation type | Surface mount |
| packing | TR |
| series | OptiMOS™ |
| Part status | stop production |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO252-3 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 27A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 33 mΩ @ 27A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 29µA |
| Gate charge (Qg) at different Vgs (maximum) | 24 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 1570 pF @ 50 V |
| Power dissipation (maximum) | 58W(Tc) |