BSB012NE2LX
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BSB012NE2LX
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BSB012NE2LX

Brand:Infineon
Model:BSB012NE2LX
stock:36315
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Common problem
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Installation type Surface mount
packing TR,CT
series OptiMOS™
Part status stop production
working temperature -40°C ~ 150°C(TJ)
Encapsulation/Housing MG-WDSON-2,CanPAK M™
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 25 V
Current at 25 ° C - continuous drain (Id) 37A(Ta),170A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 1.2 mΩ @ 30A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 67 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 4900 pF @ 12 V
Power dissipation (maximum) 2.8W(Ta),57W(Tc)
Common problem
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