IRF1902GPBF
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IRF1902GPBF
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IRF1902GPBF

Brand:Infineon
Model:IRF1902GPBF
stock:93031
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing pipe
series HEXFET®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SO
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 4.2A(Ta)
On resistance (maximum) for different Ids and Vgs 85 mΩ @ 4A,4.5V
Vgs (th) (maximum) for different Ids 700mV @ 250µA
Gate charge (Qg) at different Vgs (maximum) 7.5 nC @ 4.5 V
Input capacitance at different Vds (Ciss) (maximum) 310 pF @ 15 V
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