IRLMS2002GTRPBF
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IRLMS2002GTRPBF
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IRLMS2002GTRPBF

Brand:Infineon
Model:IRLMS2002GTRPBF
stock:48091
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series HEXFET®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing Micro6™(SOT23-6)
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 6.5A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 30 mΩ @ 6.5A,4.5V
Vgs (th) (maximum) for different Ids 1.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 22 nC @ 5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 1310 pF @ 15 V
Power dissipation (maximum) 2W(Ta)
Common problem
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