IPB80N06S2LH5ATMA4
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IPB80N06S2LH5ATMA4
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IPB80N06S2LH5ATMA4

Brand:Infineon
Model:IPB80N06S2LH5ATMA4
stock:82063
Store:ShenZhen/Hongkong
Price:1+
$0.24
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product details
Common problem
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Installation type Surface mount
packing TR,bulk
series OptiMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO263-3-2
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 55 V
Current at 25 ° C - continuous drain (Id) 80A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 4.7 mΩ @ 80A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 190 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 5000 pF @ 25 V
Power dissipation (maximum) 300W(Tc)
Common problem
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