IPP023NE7N3G
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IPP023NE7N3G
Brand：Infineon
Model：IPP023NE7N3G
stock：33490
Store：ShenZhen/Hongkong
Price:
The market price fluctuates. Please consult the customer service for the actual price
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WhatsApp：+86 19166251823
Email：online3@ssf-asia.com
Wechat：+86 19166251823
Team：online1@ssf-asia.com
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| Installation type | Through-Hole |
| packing | pipe |
| series | OptiMOS™ 3 |
| Part status | stop production |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO220-3 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 75 V |
| Current at 25 ° C - continuous drain (Id) | 120A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 2.3 mΩ @ 100A,10V |
| Vgs (th) (maximum) for different Ids | 3.8V @ 273µA |
| Gate charge (Qg) at different Vgs (maximum) | 206 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 14400 pF @ 37.5 V |
| Power dissipation (maximum) | 300W(Tc) |
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