IGT60R070D1ATMA1
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IGT60R070D1ATMA1
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IGT60R070D1ATMA1

Brand:Infineon
Model:IGT60R070D1ATMA1
stock:5204
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series CoolGaN™
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-HSOF-8-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology GaNFET(Gallium nitride)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 31A(Tc)
Vgs (th) (maximum) for different Ids 1,6V @ 2,6mA
Vgs (max) -10V
Input capacitance at different Vds (Ciss) (maximum) 380 pF @ 400 V
Power dissipation (maximum) 125W(Tc)
Common problem
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