Installation type | Surface mount |
packing | TR,CT |
series | CoolGaN™ |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | PG-HSOF-8-3 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | GaNFET(Gallium nitride) |
FET Type | N channels |
Drain source voltage (Vdss) | 600 V |
Current at 25 ° C - continuous drain (Id) | 31A(Tc) |
Vgs (th) (maximum) for different Ids | 1,6V @ 2,6mA |
Vgs (max) | -10V |
Input capacitance at different Vds (Ciss) (maximum) | 380 pF @ 400 V |
Power dissipation (maximum) | 125W(Tc) |