| Installation type | Surface mount |
| packing | TR |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-SOIC |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 13.3A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V |
| On resistance (maximum) for different Ids and Vgs | 9 mΩ @ 15A,4.5V |
| Vgs (th) (maximum) for different Ids | 1V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 62 nC @ 5 V |
| Vgs (max) | ±12V |
| Input capacitance at different Vds (Ciss) (maximum) | 3780 pF @ 16 V |
| Power dissipation (maximum) | 2.5W(Ta) |