K4UBE3D4AA-MGCR
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K4UBE3D4AA-MGCR
Brand：Samsung
Model：K4UBE3D4AA-MGCR
stock：20K+
Store：ShenZhen/Hongkong
Price:
The market price fluctuates. Please consult the customer service for the actual price
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| Voltage - Supply | 1.8 / 1.1 / 0.6 V |
| organization | x32 |
| speed | 4266 Mbps |
| Density | 32 GB |
| Package | 200 FBGA |
| Product Status | Mass Production |
| Operating Temperature | -25 ~ 85 °C |
Common problem
Industry trends
SK Hynix successfully developed 238 layers of NAND flash memory
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DRAM is severely oversupplied and is not expected to stop until the third quarter of 2023
Toshiba MCU plant forced to stop work due to power outage! Or cause a significant reduction in production capacity
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Expected 15%-20% decline in NAND Flash prices in the fourth quarter
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