| Memory format | DRAM |
| Installation type | Surface mount |
| packing | pallet |
| Part status | Not applicable to new design |
| Memory type | Volatile |
| storage capacity | 512Mb(64M x 8) |
| Voltage - Supply | 2.5V ~ 2.7V |
| working temperature | 0°C ~ 70°C(TA) |
| Memory interface | Paralleling |
| Clock frequency | 200 MHz |
| Access time | 700 ps |
| Encapsulation/Housing | 66-TSSOP (szerokość 0,400,10,16mm) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Write cycle time - words, pages | 15ns |