| Memory format | DRAM | 
| Installation type | Surface mount | 
| packing | TR | 
| Part status | stop production | 
| Memory type | Volatile | 
| storage capacity | 2Gb(256M x 8) | 
| Voltage - Supply | 1.425V ~ 1.575V | 
| working temperature | -40°C ~ 95°C(TC) | 
| Memory interface | Paralleling | 
| Clock frequency | 800 MHz | 
| Access time | 20 ns | 
| Encapsulation/Housing | 78-TFBGA | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| Write cycle time - words, pages | 15ns |