TE28F128P30B85A IC FLASH 128MBIT PARALLEL 56TSOP
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TE28F128P30B85A IC FLASH 128MBIT PARALLEL 56TSOP
Brand：Micron
Model：TE28F128P30B85A
stock：18409
Store：ShenZhen/Hongkong
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DataSheet
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| Memory format | Flash Memory |
| Installation type | Surface mount |
| packing | pallet |
| series | StrataFlash™ |
| Part status | On sale |
| Memory type | nonvolatile |
| storage capacity | 128Mb(8M x 16) |
| Voltage - Supply | 1.7V ~ 2V |
| working temperature | -40°C ~ 85°C(TA) |
| Memory interface | Paralleling |
| Clock frequency | 40 MHz |
| Access time | 85ns |
| Access time | 85 ns |
| Encapsulation/Housing | 56-TFSOP(0.724,18.40mm wide) |
| Country of origin | China/USA/Japan, etc |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | FLASH - NOR |
| Random read | - |
| - | |
| Current - maximum | - |
| Flash architecture | - |
Common problem
Industry trends
M391A4G43BB1-CWE Samsung DDR4 3200 32G server module
SK Hynix successfully developed 238 layers of NAND flash memory
Samsung came with news that there was a change in building a factory in the United States, and the US plan may be lost
Texas Instruments' new Texas chip factory began mass production
Advantages of Micron memory chips (why micron chips are recommended)
M393A2K43EB3-CWE Samsung DDR4 3200 16G Server Memory ECC REG
DRAM is severely oversupplied and is not expected to stop until the third quarter of 2023
Chip exports fell by 30%, and the price of SSD memory was directly cut
M391A2K43DB1-CVF Samsung DDR4 2933 ECC 16G server memory module
Toshiba MCU plant forced to stop work due to power outage! Or cause a significant reduction in production capacity
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