| Memory format | DRAM |
| Installation type | Surface mount |
| packing | TR |
| Part status | Not applicable to new design |
| Memory type | Volatile |
| storage capacity | 256Mb(16M x 16) |
| Voltage - Supply | 3V ~ 3.6V |
| working temperature | 0°C ~ 70°C(TA) |
| Memory interface | Paralleling |
| Clock frequency | 200 MHz |
| Access time | 5 ns |
| Encapsulation/Housing | 54-TFBGA |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |